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AL422B Data Sheets
(Revision V1.5)
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AL422B
Amendments (Since April 2, 1999)
05-13-99 07-02-99 08-03-99 09-02-99 10-26-99 12-15-99 01-18-01 DC/AC characteristics (including current consumption) updated. Pinout diagram (5.0) and DC external load (7.4) modified. Description about TST pin added in sections 6.0 & 8.1. 8.3.2 Rewritten. Capacitance provided in the AC characteristics section. Remove TST pin restriction. 1. Revised section "8.3.2 Read Enable during Reset Cycles" to "8.3.2 The Proper Manipulation of FIFO Access". 2. Add section "8.3.3 Single Field Write with Multiple Read Operation" 3. Add section "8.3.4 One Field Delay Line (The Old Data Read)" Address and version update Correct Pin-out diagram Company Contact Information updated 1. Revised "5V or 3.3V power supply" in section "2.0 Features" 2. Revised "+5V/+3.3 volt" in section "4.0 Ordering Information" 3. Revised "5V or 3.3V" in section "6.0 Pin Description" 4. Revised section "7.0 Electrical Characteristics" 5. Revised section "8.2 5V and 3.3V application" Include PB-free package "AL422B-PBF"
02-28-02 03-20-02 02-20-03 04-27-04
05-11-04
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AL422B 3M-Bits FIFO Field Memory
Contents:
1.0 Description _________________________________________________________________ 4 2.0 Features____________________________________________________________________ 4 3.0 Applications_________________________________________________________________ 4 4.0 Ordering Information _________________________________________________________ 4 5.0 Pinout Diagram______________________________________________________________ 5 6.0 Pin Description ______________________________________________________________ 6 7.0 Electrical Characteristics ______________________________________________________ 6
7.1 Absolute Maximum Ratings ________________________________________________________ 6 7.2 Recommended Operating Conditions ________________________________________________ 7 7.3 DC Characteristics________________________________________________________________ 7 7.4 AC Characteristics________________________________________________________________ 7 7.5 Timing Diagrams ________________________________________________________________ 10
8.0 Functional Description_______________________________________________________ 14
8.1 Memory Operation ______________________________________________________________ 15 8.2 5V and 3.3V applications _________________________________________________________ 16 8.3 Restrictions_____________________________________________________________________ 17
8.3.1 Irregular Read/Write __________________________________________________________________ 17 8.3.2 Read Enable during Reset Cycles ________________________________________________________ 18
9.0 Mechanical Drawing ________________________________________________________ 19
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1.0 Description
The AL422 consists of 3M-bits of DRAM, and is configured as 393,216 words x 8 bit FIFO (first in first out). The interface is very user-friendly since all complicated DRAM operations are already managed by the internal DRAM controller. Current sources of similar memory (field memory) in the market provide limited memory size which is only enough for holding one TV field, but not enough to hold a whole PC video frame which normally contains 640x480 or 720x480 bytes. The AverLogic AL422 provides 50% more memory to support high resolution for digital PC graphics or video applications. The 50% increase in speed also expands the range of applications.
2.0 Features
384K (393,216) x 8 bits FIFO organization Support VGA, CCIR, NTSC, PAL and HDTV resolutions Independent read/write operations (different I/O data rates acceptable) High speed asynchronous serial access Read/write cycle time: 20ns Access time: 15ns Output enable control (data skipping) Self refresh 5V or 3.3V power supply Standard 28-pin SOP package
3.0 Applications
Multimedia systems Video capture systems Video editing systems Scan rate converters TV's picture in picture feature Time base correction (TBC) Frame synchronizer Digital video camera Buffer for communications systems
4.0 Ordering Information
Part number AL422B AL422B-PBF Package 28-pin plastic SOP 28-pin plastic SOP Power Supply +5/+3.3 volt +5/+3.3 volt Status Shipping Shipping
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5.0 Pinout Diagram
DO0 DO1 DO2 DO3
28 27 26 25
/RE GND /OE /RRST RCK DEC DO4 DO5 DO6 DO7
24 23 22 21 20 19 18 17 16 15
AVERLOGIC AL422B XXXXX XXXX
1 2 3 4 5 6 7 8 9 10 11 12 13 14
Lot Number Date Code
DI0
DI1
DI2
DI3
/WE GND TST /WRST WCK VDD
DI4
DI5
DI6
DI7
AL422-04 422B pinout diagram
DO0 DO1 DO2 DO3
28 27 26 25
/RE GND /OE /RRST RCK DEC DO4 DO5 DO6 DO7
24 23 22 21 20 19 18 17 16 15
AVERLOGIC AL422B XXXXX XXXX
1 2 3 4 5 6 7 8 9 10 11 12 13 14
Lot Number Date Code
DI0
DI1
DI2
DI3
/WE GND TST /WRST WCK VDD
DI4
DI5
DI6
DI7
AL422B-PBF pinout diagram
Note: "PBF" to indicate it is Pb free package.
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6.0 Pin Description
Pin name DI0~DI7 WCK /WE /WRST DO0~DO7 RCK /RE /RRST /OE TST VDD DEC/VDD GND Pin # 1~4, 11~14 9 5 8 15~18, 25~28 20 24 21 22 7 10 19 6, 23 I/O type input Input Input (active low) Input (active low) Output (tristate) Input Input (active low) Input (active low) Input (active low) Input Function Data input Write clock Write enable Write reset Data output Read clock Read enable Read reset Output enable Test pin (pulled-down)* 5V or 3.3V Decoupling cap input Ground
7.0 Electrical Characteristics
7.1 Absolute Maximum Ratings
Parameter VDD VP IO TAMB Tstg Supply Voltage Pin Voltage Output Current Ambient Op. Temperature Storage temperature -1.0 ~ +4.5 -1.0 ~ +5.5 -20 ~ +20 0 ~ +70 -55 ~ +125 Ratings 3.3V application 5V application -1.0 ~ +7.0 -1.0 ~ VDD +0.5 -20 ~ +20 0 ~ +70 -55 ~ +125 V V mA C C Unit
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7.2 Recommended Operating Conditions
Parameter VDD VIH VIL Supply Voltage High Level Input Voltage Low Level Input Voltage 3.3V application Min +3.0 +2.0 -1.0 Max +3.6 +5.5 +0.8 5V application Min +4.5 +3.0 -1.0 Max +5.25 VDD +0.5 +0.8 V V V Unit
7.3 DC Characteristics
(VDD =5V or 3.3V, Vss=0V. TAMB = 0 to 70C)
Parameter IDD IDD IDD IDD IDDS VOH VOL ILI ILO Operating Current @20MHz Operating Current @30MHz Operating Current @40MHz Operating Current @50MHz Standby Current Hi-level Output Voltage Lo-level Output Voltage Input Leakage Current Output Leakage Current 0.7VDD -10 -10 3.3V application Min Typ 33 45 57 68 7 Max VDD +0.4 +10 +10 5V application Min +3.0 -10 -10 Typ 50 66 82 97 12 Max VDD +0.4 +10 +10 mA mA mA mA mA V V A A Unit
7.4 AC Characteristics
(VDD =5V or 3.3V, Vss=0V, TAMB = 0 to 70C)
Parameter TWC TWPH TWPL TRC TRPH TRPL TAC TOH WCK Cycle Time WCK High Pulse Width WCK Low Pulse Width RCK Cycle Time RCK High Pulse Width RCK Low Pulse Width Access Time Output Hold Time 3.3V application Min 20 7 7 20 7 7 4 Max 1000 1000 15 5V application Min 20 7 7 20 7 7 4 Max 1000 1000 15 ns ns ns ns ns ns ns ns Unit
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THZ TLZ TWRS TWRH TRRS TRRH TDS TDH TWES TWEH TWPW TRES TREH TRPW TOES TOEH TOPW TTR CI CO
Output High-Z Setup Time Output Low-Z Setup Time /WRST Setup Time /WRST Hold Time /RRST Setup Time /RRST Hold Time Input Data Setup Time Input Data Hold Time /WE Setup Time /WE Hold Time /WE Pulse Width /RE Setup Time /RE Hold Time /RE Pulse Width /OE Setup Time /OE Hold Time /OE Pulse Width Transition Time Input Capacitance Output Capacitance
3 3 5 2 5 2 5 2 5 2 10 5 2 10 5 2 10 2 -
15 15 20 7 7
4 4 6 3 6 3 6 3 6 3 10 6 3 10 6 3 10 3 -
15 15 20 7 7
ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns pF pF
Input voltage levels are defined as VIH=3.0V and VIL=0.4V. The read address needs to be at least 128 cycles after the write address.
DO external load:
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7.5 Timing Diagrams
Reset cycle (s)
cycle n
cycle 0
cycle 1
WCK
TTR TWRS TWRH
/WRST
TDS
TDH
DI7~0
n-1
n
0
1
AL422-05 Write Cycle Timing (Write Reset)
cycle n TRPL
Reset cycle (s)
cycle 0
cycle 1
RCK
TRPH
TRRS
TRRH
/RRST
TAC TOH
DO7~0
n-1
n
0
0
1
AL422-07 Read Cycle Timing (Read Reset)
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cycle n TRPL
cycle n+1
Disable cycle (s)
cycle n+2
RCK
TRPH TRC TRES TREH
/RE
TRPW TAC TOH
DO7~0
n-1
n
n+1
n+2
AL422-08 Read Cycle Timing (Read Enable)
cycle n TRPL
cycle n+1
cycle n+2
cycle n+3
cycle n+4
RCK
TRPH TRC TOES TOEH
/OE
TOPW TAC TOH THZ Hi-Z TLZ
DO7~0
n-1
n
n+1
n+4
AL422-09 Read Cycle Timing (Output Enable)
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cycle n TWPL
cycle n+1
Disable cycle (s)
cycle n+2
WCK
TWPH TWC TWES TWEH
/WE
TWPW TDS TDH
DI7~0
n-1
n
n+1
n+2
AL422-06 Write Cycle Timing (Write Enable)
cycle n TRPL
cycle n+1
Disable cycle (s)
cycle 0
RCK
TRPH TRC TRRS TRRH
/RRST
TRES
TREH
/RE
TRPW TAC TOH
DO7~0
n-1
n
n+1
0
AL422-14 Read Cycle Timing (RE, RRST)
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cycle n TWPL
cycle n+1
Disable cycle (s)
cycle 0
cycle 1
WCK
TWPH
TWC
TWRS
TWRH
/WRST
TWES
TWEH
/WE
TWPW TDS TDH
DI7~0
n-1
n
n+1
0
1
AL422-15 Write Cycle Timing (WE, WRST)
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8.0 Functional Description
The AL422 is a video frame buffer consisting of DRAM that works like a FIFO which is long enough to hold up to 819x480 bytes of picture information and fast enough to operate at 50MHz. The functional block diagram is as follows:
DI7~ DI0
Input Buffer
Write Data Register
384k x8 Memory Cell Array
Read Data Register
Output Buffer
DO7~ DO0
/OE
WCK /WRST /WE
Write Address Counter
Timing Generator & Arbiter
Read Address Counter
RCK /RRST /RE
Refresh Address Counter
AL422-03 Block Diagram
The I/O pinouts and functions are described as follows: DI7~DI0 Data Input: Data is input on the rising edge of the cycle of WCK when /WE is pulled low (enabled). DO7~DO0 Data Output: Data output is synchronized with the RCK clock. Data is obtained at the rising edge of the RCK clock when /RE is pulled low. The access time is defined from the rising edge of the RCK cycle. WCK Write Clock Input: The write data input is synchronized with this clock. Write data is input at the rising edge of the WCK cycle when /WE is pulled low (enabled). The internal write address pointer is incremented automatically with this clock input. RCK Read Clock Input: The read data output is synchronized with this clock. Read data output at the rising edge of the RCK cycle when /OE is pulled low (enabled). The internal read address pointer is incremented with this clock input. /WE Write Enable Input: /WE controls the enabling/disabling of the data input. When /WE is pulled low, input data is acquired at the rising edge of the WCK cycle. When /WE is pulled high, the memory does not accept data input. The write address pointer is stopped at the current position. /WE signal is fetched at the rising edge of the WCK cycle.
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/RE Read Enable Input: /RE controls the operation of the data output. When /RE is pulled low, output data is provided at the rising edge of the RCK cycle and the internal read address is incremented automatically. /RE signal is fetched at the rising edge of the RCK cycle. /OE Output Enable Input: /OE controls the enabling/disabling of the data output. When /OE is pulled low, output data is provided at the rising edge of the RCK cycle. When /OE is pulled high, data output is disabled and the output pins remain at high impedance status. /OE signal is fetched at the rising edge of RCK cycle. /WRST Write Reset Input: This reset signal initializes the write address to 0, and is fetched at the rising edge of the WCK input cycle. /RRST Write Reset Input: This reset signal initializes the read address to 0, and is fetched at the rising edge of the RCK input cycle. TST Test Pin: For testing purpose only. It should be pulled low for normal applications. DEC: Decoupling cap pin, should be connected to a 1 F or 2.2 F capacitor to ground for 5V application. For 3.3V application, the DEC pin can be simply connected to the 3.3V power with regular 0.1 F bypass capacitor.
8.1 Memory Operation
Initialization Apply /WRST and /RRST 0.1ms after power on, then follow the following instructions for normal operation. Reset Operation The reset signal can be given at any time regardless of the /WE, /RE and /OE status, however, they still need to meet the setup time and hold time requirements with reference to the clock input. When the reset signal is provided during disabled cycles, the reset operation is not executed until cycles are enabled again. After WRST and RRST signals are pulled low, the data output and input start from address 0. Write Operation Data input DI7~DI0 is written into the write register at the WCK input when /WE is pulled low. The write data should meet the setup time and hold time requirements with reference to the WCK input cycle.
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Write operation is prohibited when /WE is pulled high, and the write address pointer is stopped at the current position. The write address starts from there when the /WE is pulled low again. The /WE signal needs to meet the setup time and hold time requirements with reference to the WCK input cycle. Read Operation Data output DO7~DO0 is written into the read register at the RCK input when both /RE and /OE are pulled low. The output data is ready after TAC (access time) from the rising edge of the RCK input cycle. The read address pointer is stopped at the current position when /RE is pulled high, and starts there when /RE is pulled low again. /OE needs to be pulled low for read operations. When /OE is pulled high, the data outputs will be at high impedance stage. The read address pointer still increases synchronously with RCK regardless of the /OE status. The /RE and /OE signals need to meet the setup time and hold time requirements with reference to the RCK input cycle. When the new data is read, the read address should be between 128 to 393,247 cycles after the write address, otherwise the output may not be new data.
8.2 5V and 3.3V applications
The AL422 can accept either 3.3V or 5V power with slightly different external configuration. The internal voltage regulator can convert 5V power to 3.3V for the embedded DRAM and logic circuitry when 5V power is applied to VDD pin (#10) only and leave the DEC pin (#19) decoupled by a capacitor of 1 F or 2.2 F to ground. The regulator can also be bypassed when 3.3V power is applied to both VDD and DEC pins. In either case the AL422 is 5V or 3.3V I/O tolerant. The 3.3V configuration consumes less power and is free from noise interference from the voltage regulator so may be more ideal for high-speed applications. Please note that using the AL422B with 5V configuration can directly replace the previous AL422V5; using it with 3.3V configuration can directly replace the previous AL422V3. No additional modification is required. The 5V configuration (direct replacement of the previous AL422V5) is as follows:
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AL422
5V
AL422B
VDD 0.1uF DEC 2.2uF
The 3.3V configuration (direct replacement of the previous AL422V3) is as follows:
3.3V 3.3V
AL422B
10 0.1uF VDD DEC 19 0.1uF
8.3 Restrictions
8.3.1 Irregular Read/Write It is recommended that the WCK and RCK are kept running at least 1MHz at all times. The faster one of WCK and RCK is used as the DRAM refresh timing clock and has to be kept free running. When irregular FIFO I/O control is needed, keep the clock free running and use /WE or /RE to control the I/O as follows:
WCK
Data
/WE
AL422-17 Slow Write - Correct
The following drawing shows irregular clock and should be avoided:
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AL422
WCK
Data
/WE
AL422-16 Slow Write - Incorrect
8.3.2 Read Enable during Reset Cycles /RE should never be low at the rising edge of /RRST. The following cases are acceptable:
/RRST
/RE
These cases are ok
The following cases should always be avoided:
/RRST
/RE
These cases are not ok
Please use the drawing AL422-14, Read Cycle Timing (RE, RRST) as enable/reset timing reference.
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9.0 Mechanical Drawing
28 PIN PLASTIC SOP:
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CONTACT INFORMATION
Averlogic Technologies Corp. 4F, No. 514, Sec. 2, Cheng Kung Rd., Nei-Hu Dist., Taipei, Taiwan Tel: +886 2-27915050 Fax: +886 2-27912132 E-mail: sales@averlogic.com.tw URL: http://www.averlogic.com.tw
Averlogic Technologies, Inc. 90 Great Oaks Blvd. #204, San Jose, CA 95119 USA Tel: 1 408 361-0400 Fax: 1 408 361-0404 E-mail: sales@averlogic.com URL: http://www.averlogic.com

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